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Silicon carbide (SiC) has emerged as an advanced material for nanotechnology and microelectronics, enabling new levels of performance, efficiency, and integration. This edited volume, Silicon Carbide - From Materials Science to Nanotechnology and Microelectronics , provides a comprehensive overview of recent developments in SiC materials, processing, and device applications. It offers a clear and accessible perspective on the unique properties of SiC and its role in driving the next generation of high-performance devices. The book highlights the interdisciplinary nature of SiC research, covering topics such as semiconductor materials, thin films, doping strategies, wafer processing, nanostructures, quantum dots, and sustainable energy applications. It presents key advances in fabrication methods, material characterization, and device integration. The volume also explores emerging applications of SiC in optoelectronics and energy conversion technologies, making it a valuable reference for both academic and industrial audiences. Combining contributions from leading researchers, this book serves as a practical resource for scientists, engineers, and students seeking to understand and apply SiC technologies. Its broad scope and accessible structure make it suitable for readers across various disciplines, including materials science, electrical engineering, energy, and nanotechnology. Whether for research or teaching, this volume offers a strategic overview of one of the most promising materials for the future of advanced devices.
This book is included in DOAB.
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Keywords
- Electronics
- Optoelectronics
Links
DOI: 10.5772/intechopen.1004992Editions