Explore
Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich
Sebastian Diebold
2013
0 Ungluers have
Faved this Work
Login to Fave
The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative coupler concept is developed. It is tailor-made for the applied MMIC-technology and the frequency range. Based on this coupler, a novel amplifier topology has been established and applied.
This book is included in DOAB.
Why read this book? Have your say.
You must be logged in to comment.
Rights Information
Are you the author or publisher of this work? If so, you can claim it as yours by registering as an Unglue.it rights holder.Downloads
This work has been downloaded 125 times via unglue.it ebook links.
- 125 - pdf (CC BY-SA) at Unglue.it.
Keywords
- 3-5
- coplanar waveguide
- FETmillimeterwave
- HEMT
- III-V semiconductor
- koplanarer Wellenleiter
- Leistungsverstärker
- mHEMT
- microstrip transmission line
- Mikrostreifenleitung
- Millimeterwelle
- millimetre-wave
- millimetre-wave, coplanar waveguide
- MMIC
- monolithic integrated
- power amplifier
- Terahertz
- Verbindungshalbleiter
Links
DOI: 10.5445/KSP/1000037898Editions