Explore
AlGaN-GaN-HEMT Power Amplifiers with Optimized Power-added Efficiency for X-band Applications
Jutta Kühn
2011
0 Ungluers have
Faved this Work
Login to Fave
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
This book is included in DOAB.
Why read this book? Have your say.
You must be logged in to comment.
Rights Information
Are you the author or publisher of this work? If so, you can claim it as yours by registering as an Unglue.it rights holder.Downloads
This work has been downloaded 42 times via unglue.it ebook links.
- 42 - pdf (CC BY-NC-ND) at Unglue.it.
Keywords
- AlGaN/GaN HEMT
- MMIC design
- power amplifier
- power-added efficiency
- Technology, engineering, agriculture
- Technology: general issues
- X-band
Links
DOI: 10.5445/KSP/1000021579Editions