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Nanoelectronic Materials, Devices and Modeling
Qiliang Li and Hao Zhu
2019
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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
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Keywords
- 2D material
- 2DEG density
- AlGaN/GaN
- atomic layer deposition (ALD)
- back current blocking layer (BCBL)
- band-to-band tunneling
- Bandgap tuning
- bismuth ions
- bistability
- charge injection
- CMOS power amplifier IC
- conditioned reflex
- conduction band offset
- conductive atomic force microscopy (cAFM)
- conductivity
- corner-effect
- cross-gain modulation
- current collapse
- dielectric layer
- distributed Bragg
- double-gate tunnel field-effect-transistor
- drain-induced barrier lowering (DIBL)
- dual-switching transistor
- electron affinity
- Energy Storage
- enhancement-mode
- field-effect transistor
- Gallium nitride
- gallium nitride (GaN)
- gate field effect
- gate-induced drain leakage (GIDL)
- Graphene
- Green’s function
- heterojunction
- hierarchical
- high efficiency
- high-electron mobility transistor (HEMTs)
- higher order synchronization
- InAlN/GaN heterostructure
- Information Integration
- insulator–metal transition (IMT)
- interface traps
- ionic liquid
- L-shaped tunnel field-effect-transistor
- landing
- low voltage
- luminescent centres
- memristive device
- memristor
- MISHEMT
- Mott transition
- n/a
- nanostructure synthesis
- neuromorphic computation
- normally off power devices
- off-current (Ioff)
- on-current (Ion)
- Optoelectronic devices
- oscillatory neural networks
- p-GaN
- pattern recognition
- PC1D
- PECVD
- polarization effect
- potential drop width (PDW)
- quantum dot
- quantum mechanical
- recessed channel array transistor (RCAT)
- reflection transmision method
- saddle FinFET (S-FinFET)
- sample grating
- Semiconductor Optical Amplifier
- shallow trench isolation (STI)
- Silicon
- silicon on insulator (SOI)
- solar cells
- source/drain (S/D)
- spike-timing-dependent plasticity
- subthreshold slope (SS)
- supercapacitor
- synaptic device
- thermal coupling
- third harmonic tuning
- threshold voltage (VTH)
- topological insulator
- topological magnetoelectric effect
- two-photon process
- UAV
- UV irradiation
- vanadium dioxide
- variational form
- vertical field-effect transistor (VFET)
- vision localization
- Zinc oxide
- ZnO films
- ZnO/Si
Links
DOI: 10.3390/books978-3-03921-226-2Editions
