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Wide Bandgap Semiconductor Based Micro/Nano Devices
Jung-Hun Seo
2019
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
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Keywords
- 1T DRAM
- 4H-SiC
- AlGaN/GaN
- AlGaN/GaN HEMT
- ammonothermal GaN
- amorphous InGaZnO (a-IGZO)
- amplitude balance
- analytical model
- annealing temperature
- anode field plate (AFP)
- asymmetric power combining
- breakdown voltage (BV)
- buffer layer
- cathode field plate (CFP)
- channel length modulation
- characteristic length
- DIBL effect
- distributed Bragg reflector
- edge termination
- electrochromism
- external quantum efficiency
- flip-chip light-emitting diodes
- gallium nitride (GaN)
- GaN
- GaN high electron mobility transistor (HEMT)
- growth of GaN
- harsh environment
- high electron mobility transistor (HEMT)
- high electron mobility transistors
- high electron mobility transistors (HEMTs)
- high-temperature operation
- I–V kink effect
- junction termination extension (JTE)
- Ku-band
- large signal performance
- light output power
- MESFET
- micron-sized patterned sapphire substrate
- n/a
- ohmic contact
- optical band gap
- passivation layer
- phase balance
- positive gate bias stress (PGBS)
- power added efficiency
- power amplifier
- regrown contact
- sidewall GaN
- silicon carbide (SiC)
- space application
- T-anode
- TCAD
- thin-film transistor (TFT)
- threshold voltage (Vth) stability
- tungsten trioxide film
- ultrahigh upper gate height
- W band
- wide-bandgap semiconductor
Links
DOI: 10.3390/books978-3-03897-843-5Editions
