Explore
Strain-Engineered MOSFETs
C.K. Maiti and T.K. Maiti
2012
0 Ungluers have
Faved this Work
Login to Fave
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
This book is made open access as part of the Knowledge Unlatched KU Select 2018: STEM Backlist Books
This book is made open access as part of the Knowledge Unlatched KU Select 2018: STEM Backlist Books
This book is included in DOAB.
Why read this book? Have your say.
You must be logged in to comment.
Rights Information
Are you the author or publisher of this work? If so, you can claim it as yours by registering as an Unglue.it rights holder.Downloads
This work has been downloaded 107 times via unglue.it ebook links.
- 38 - pdf (CC BY-NC-ND) at OAPEN Library.
- 44 - pdf (CC BY-NC-ND) at Unglue.it.
Keywords
- Electrical engineering
- Electronics & communications engineering
- Electronics engineering
- Engineering
- KUnlatched
- TEC008070
- Technology, engineering, agriculture
Links
DOI: 10.1201/b13014Editions
