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Emerging Memory and Computing Devices in the Era of Intelligent Machines

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Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system.

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Keywords

  • 3D-stacked
  • analogue computing
  • annealing temperatures
  • associative processor
  • BCH
  • bioelectronic devices
  • biologic gate
  • biomemory
  • bionanohybrid material
  • bioprocessor
  • bipolar resistive switching characteristics
  • blockchain
  • chalcogenide
  • character recognition
  • charge spreading
  • conductive filament
  • configurable logic-in-memory architecture
  • convolutional neural networks
  • crossbar
  • crossbar array
  • CUDA
  • data retention
  • decoder
  • Dram
  • dynamic voltage scaling
  • ECG
  • electrochemical metallization (ECM)
  • electrochemical metallization cell
  • Emerging Technologies
  • Fast Fourier Transform
  • flash memory
  • flip-flop
  • Floating gate
  • Galois field
  • GPU
  • guide training
  • Hebbian training
  • hybrid
  • IBM
  • image classification
  • in-DRAM cache
  • in-memory computing
  • Internet of Things
  • ion conduction
  • logic-in-memory
  • low-latency
  • low-power
  • low-power technique
  • magnetic tunnel junction
  • magnetoresistive random access memory
  • matrix-vector multiplication
  • MCU (microprogrammed control unit)
  • memory wall
  • memristor
  • multi-level cell
  • n/a
  • Nanoparticles
  • neuromorphic computing
  • neuromorphic system
  • non-von Neumann architecture
  • nonvolatile memory
  • nucleic acid
  • Oxygen-related trap
  • perpendicular Nano Magnetic Logic (pNML)
  • phase change memory
  • plasma treatment
  • power gating
  • programmable ramp-down current pulses
  • Protein
  • quantum point contact
  • real-time system
  • resistance switching mechanism
  • resistive memory
  • resistive random access memory (RRAM)
  • RISC-V
  • self-directed channel (SDC)
  • silicon oxide-based memristors
  • solution-based dielectric
  • SONOS
  • STT-MRAM
  • synaptic weight
  • task placement
  • U-shape recessed channel
  • variability
  • voltage-controlled magnetic anisotropy
  • Weibull distribution
  • wire resistance

Links

DOI: 10.3390/books978-3-03928-503-7

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