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Preparation and Properties of 2D Materials
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Since the great success of graphene, atomically thin-layered nanomaterials, called two dimensional (2D) materials, have attracted tremendous attention due to their extraordinary physical properties. Specifically, van der Waals heterostructured architectures based on a few 2D materials, named atomic-scale Lego, have been proposed as unprecedented platforms for the implementation of versatile devices with a completely novel function or extremely high-performance, shifting the research paradigm in materials science and engineering. Thus, diverse 2D materials beyond existing bulk materials have been widely studied for promising electronic, optoelectronic, mechanical, and thermoelectric applications. Especially, this Special Issue included the recent advances in the unique preparation methods such as exfoliation-based synthesis and vacuum-based deposition of diverse 2D materials and also their device applications based on interesting physical properties. Specifically, this Editorial consists of the following two parts: Preparation methods of 2D materials and Properties of 2D materials
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Keywords
- 2D heterostructure
- 2D/2D heterojunction
- atomic crystal
- band-to-band tunneling (BTBT)
- bias stress stability
- bilayer-stacked structure
- black phosphorus
- carbon nitride
- chemical vapor deposition
- contact resistance
- disorder
- ferroelectrics
- few-layer MoS2
- film–substrate interaction
- flexible substrate
- g-C3N4
- History of engineering & technology
- interfacial layer
- junction FET
- Langmuir–Blodgett technique
- liquid exfoliation
- lubricant additives
- magnetron sputtering
- magnetron sputtering power
- mechanical exfoliation
- molybdenum disulfide
- molybdenum trioxide
- MoS2
- MoS2 nanosheet
- n/a
- nanoplates
- natural molybdenite
- Nb2O5 interlayer
- NbSe2
- neuromorphic system
- P-doped MoS2
- p-type conduction
- P2O5
- photoelectric properties
- Photoluminescence
- Q-switched laser
- Raman spectroscopy
- saturable absorbers
- scanning Kelvin probe microscopy
- SiO2
- synapse device
- Synthesis
- Technology, engineering, agriculture
- Technology: general issues
- transition metal dichalcogenides
- tribological properties
- tunneling diode
- tunneling FET
- two-dimensional materials
- uniaxial strain
- V2Se9
- WS2
- WSe2
- α-MoO3
Links
DOI: 10.3390/books978-3-03936-259-2Editions