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Wide Bandgap Based Devices
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Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits.
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Keywords
- 4H-SiC
- active power filter (APF)
- AESA radars
- Ag sinter paste
- AlGaN/GaN
- amorphous InGaZnO
- asymmetric multiple quantum wells
- barrier thickness
- breakdown voltage (BV)
- buffer trapping effect
- buried-channel
- composition-graded AlxGa1−xN electron blocking layer (EBL)
- copper metallization
- cosolvent
- direct bonded copper (DBC) substrate
- distortions
- distributed feedback (DFB)
- double barrier
- electrochromism
- electron leakage
- electron leakage current
- flexible devices
- Gallium nitride
- gallium nitride (GaN)
- Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
- GaN
- GaN 5G
- GaN laser diode
- GaN-based vertical-cavity surface-emitting laser (VCSEL)
- GaN-on-GaN
- grooved-anode diode
- HEMT
- hierarchical nanostructures
- high electron mobility transistors
- high electron mobility transistors (HEMT)
- high-electron-mobility transistor (HEMT)
- high-electron-mobility transistors
- high-energy α-particle detection
- IGBT
- InGaN laser diodes
- jammer system
- low voltage
- metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)
- millimeter wave
- Morphology
- n/a
- new radio
- nitrogen-doping
- normally off
- normally-off operation
- Numerical Simulation
- ON-state voltage
- optical absorption loss
- optical band gap
- optimization
- photon extraction efficiency
- photonic emitter
- polyol method
- power amplifier
- power cycle test
- power quality (PQ)
- power switching device
- proton irradiation
- recessed gate
- Reliability
- RF front-end
- schottky barrier diodes
- self-align
- SiC micro-heater chip
- sidewall gratings
- silver nanoring
- silver nanowire
- spin coating
- Stability
- surface gratings
- Technology, engineering, agriculture
- Technology: general issues
- terahertz Gunn diode
- thermal resistance
- thick depletion width detectors
- thin-film transistor
- time-dependent dielectric breakdown (TDDB)
- transmittance
- tungsten trioxide film
- turn-off loss
- ultra-wide band gap
- vertical breakdown voltage
- vertical gate structure
- wide band gap semiconductors
- wide band-gap (WBG)
- wide bandgap semiconductors
- wide-bandgap semiconductor
- wideband
- ZnO nanorod/NiO nanosheet
Links
DOI: 10.3390/books978-3-0365-0567-1Editions