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Characterization of Nanomaterials: Selected Papers from 6th Dresden Nanoanalysis Symposiumc
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This Special Issue “Characterization of Nanomaterials” collects nine selected papers presented at the 6th Dresden Nanoanalysis Symposium, held at Fraunhofer Institute for Ceramic Technologies and Systems in Dresden, Germany, on 31 August 2018. Following the specific motto of this annual symposium “Materials challenges—Micro- and nanoscale characterization”, it covered various topics of nanoscale materials characterization along the whole value and innovation chain, from fundamental research up to industrial applications. The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures are discussed, including modeling and simulation. We anticipate that this Special Issue will be accessible to a wide audience, as it explores not only methodical aspects of nanoscale materials characterization, but also materials synthesis, fabrication of devices and applications.
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Keywords
- 2D materials
- AlN/Al coating
- aluminum oxide
- Al–Ni system
- compositional depth profiling
- copper oxide
- degradation
- doping
- electrolyte-gated transistors
- gallium alloys
- Ga–Sn–Zn alloys
- grain boundaries
- growth kinetics
- high aspect ratio (HAR) structures
- indentation failure modes
- intermetallic phases
- lateral high aspect ratio (LHAR)
- leaching
- liquid alloys
- lithium-ion
- magnetron sputtering
- microwave synthesis
- multi-level cell
- n/a
- nanoanalysis
- nanoindentation adhesion
- Nanoparticles
- nanoscale residual stress profiling
- nickel–manganese–cobalt oxide (NMC)
- oxide dissociation
- oxide structure analysis
- p-type oxide semiconductors
- p-type TFT
- paper transistors
- physical vapor deposition
- Printed electronics
- Raman spectroscopy
- rare earth ions
- recover
- recycling
- residual stresses
- resistive switching memories
- SEM-EDX
- silicon doped hafnium oxide (HSO) ALD deposition
- silicon substrate
- SnO electrical properties
- Technology, engineering, agriculture
- Technology: general issues
- Thin films
- ToF-SIMS 3D imaging
- ToF-SIMS analysis
- upconversion
- wafer curvature method
- Zinc oxide
Links
DOI: 10.3390/books978-3-0365-0757-6Editions