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Feature Papers in Electronic Materials Section

Feature Papers in Electronic Materials Section

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This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book.

This book is included in DOAB.

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Keywords

  • 2D materials
  • 3C-SiC
  • 4H-SiC
  • aluminum oxide
  • arrhythmia detection
  • Binary oxides
  • bulk growth
  • cardiovascular monitoring
  • charge removal rate
  • chemical vapour deposition
  • Compensation
  • compliant substrates
  • cubic silicon carbide
  • CVD
  • CVD graphene
  • Defects
  • degradation
  • diamond
  • diodes
  • doping
  • Economics, finance, business & management
  • electrical characterization
  • Electron microscopy
  • energy electronics
  • Energy industries & utilities
  • epitaxial lift-off
  • Fabry–Perot filter
  • flexible bioelectronics
  • Flexible electronics
  • Ga2O3
  • GaAs
  • gallium oxide
  • GaN
  • GaN-on-diamond
  • gate dielectric
  • graphene absorption
  • HEMT
  • heteroepitaxy
  • high-throughput method
  • high-κ dielectrics
  • History of engineering & technology
  • hybrid integration
  • Industry & industrial studies
  • InGaAs channel
  • instability
  • insulators
  • interface
  • iron-based superconductor
  • irradiation temperature
  • KOH etching
  • material printing
  • MOS
  • MoS2
  • MPCVD growth
  • nanomanufacturing
  • nanomembrane
  • ohmic contact
  • Optical fibers
  • Power electronics
  • proton and electron irradiation
  • pulsed laser deposition
  • quasi-vertical GaN
  • radiation effects
  • radiation hardness
  • radio frequency sputtering
  • Reliability
  • Schottky barrier
  • Schottky diodes
  • silica point defects
  • silicon carbide
  • SIMS
  • simulation
  • soft biosensors
  • spinel
  • stacking faults
  • Stress
  • Technology, engineering, agriculture
  • Technology: general issues
  • thermal management
  • thin film
  • threshold voltage
  • Ti3SiC2
  • transistors
  • transmission electron microscopy
  • Trapping
  • traps
  • trench MOS
  • ultra-wide bandgap
  • van der Waals
  • vertical GaN
  • Wearable sensors
  • wide band gap semiconductors
  • ZnGa2O4

Links

DOI: 10.3390/books978-3-0365-3226-4

Editions

edition cover

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