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High-Density Solid-State Memory Devices and Technologies
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This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms.
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Keywords
- 3D NAND
- 3D NAND Flash
- array test pattern
- artificial intelligence
- Artificial Neural Networks
- bandwidth
- BBCube
- bumpless
- charge-trap cell
- CMOS under array
- CoFeB
- composite free layer
- cow
- crosspoint array
- deep learning
- dielectric
- endurance
- evaluation method
- floating gate cell
- History of engineering & technology
- in-memory computing
- low power electronics
- low-frequency noise
- MOSFET
- n/a
- NAND flash memory
- neuromorphic computing
- NOR Flash memory arrays
- oxide trapped charge
- phonon
- power consumption
- power spectrum
- program noise
- program suspend
- pulse-width modulation
- random telegraph noise
- Reliability
- resistive switching memory
- RTN
- Solid State Drives
- spectral index
- spintronics
- STT-MRAM
- surface roughness
- TAT
- Technology, engineering, agriculture
- Technology: general issues
- thermal management
- transient analysis
- TSV
- Wiener–Khinchin
- WOW
- yield
Links
DOI: 10.3390/books978-3-0365-3360-5Editions