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Radiation Tolerant Electronics, Volume II
Paul Leroux (editor)
2023
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Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects.
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Keywords
- 22-nm FD SOI
- 28-nm FD SOI
- 65 nm CMOS technology
- All-Digital
- CDR
- Co-60
- confidence interval
- D Flip-Flop
- D-type flip-flop
- Digital integrated circuits
- double-node upset (DNU)
- Economics, finance, business & management
- Energy industries & utilities
- ensemble method
- fault injection
- flip-flop (FF)
- generalized linear model
- half-duty limited DC-DC converter
- heavy ion
- High Energy Physics
- History of engineering & technology
- Industry & industrial studies
- laser test
- LC-tank
- n/a
- open source tools
- parasitic bipolar amplification
- PLL
- point-of-load converter
- processor
- Q-phase
- quadrature
- QVCO
- radiation
- radiation effect
- radiation effects
- radiation hardened
- radiation hardened by design
- radiation hardening
- radiation hardening by design
- radiation hardening by design (RHBD)
- radiation hardness assurance
- radiation test method
- radiation-hardened latch
- reliability improvement factor (RIF)
- ring oscillator (RO)
- SEE
- sensitive area
- simulation
- single event effects
- single event transient
- single event upset
- single event upset polarity
- Single-Event Effects
- single-node upset (SNU)
- soft error
- static random-access memory (SRAM)
- super-harmonic
- system qualification
- system-level testing
- system-level tests
- Technology, engineering, agriculture
- Technology: general issues
- thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities
- TID
- time redundancy (TR)
- TMR/Simplex
- total ionizing dose
- total ionizing dose (TID)
- triple modular redundancy
- triple modular redundancy TMR
- VCO
- VHDL
- X-ray
Links
DOI: 10.3390/books978-3-0365-6444-9Editions