Explore
Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
0 Ungluers have
Faved this Work
Login to Fave
This essential collection, edited by Dr. Zeheng Wang and Dr. Jing-Kai Huang, unveils the latest advancements in semiconductor technology that are considered to be the cornerstone of the modern digital era. Spanning cutting-edge research in semiconductor materials, devices, and systems, this reprint is an indispensable guide through the innovative realms of microelectronics and nanotechnology.Dive into expert discussions on device architectures, from high-electron-mobility transistors to innovative designs resistant to extreme conditions. Explore the frontiers of material science and fabrication techniques, witnessing groundbreaking methods that enhance device performance and reliability. Uncover the evolving landscape of energy efficiency and power management, crucial for next-generation telecommunications and electric vehicles. Lastly, immerse yourself in the dynamic world of optoelectronics, where advancements in light-based technologies are redefining possibilities.Bringing together pioneering research papers, this volume is not just an academic resource but a beacon for industry professionals and scholars alike, pointing the way to the future of semiconductor technology.
This book is included in DOAB.
Why read this book? Have your say.
You must be logged in to comment.
Rights Information
Are you the author or publisher of this work? If so, you can claim it as yours by registering as an Unglue.it rights holder.Downloads
This work has been downloaded 9 times via unglue.it ebook links.
- 9 - pdf (CC BY) at Unglue.it.
Keywords
- a-IGZO
- AlGaN/GaN
- angular deflection
- anti-irradiation optimization
- band-to-band tunneling (BTBT)
- bulk electron accumulation (BEA)
- BV and Ron,sp
- conductive polymer tantalum chip capacitor
- DC–DC converter
- derating
- diamond
- direct laser inscription
- dual-gate
- Economics, finance, business & management
- eGaN
- electric field coupling noise
- Energy industries & utilities
- ESD
- extended drain (ED)
- extended superjunction trench gate
- false trigger
- fluorides
- GaN
- HBM
- HfO2
- high electron mobility transistors
- high-electron-mobility transistor
- History of engineering & technology
- Industry & industrial studies
- light extraction efficiency
- linear energy transfer value (LET)
- lock-in amplifier circuit
- magnetron sputtering
- metasurface
- micro-LED
- MTBF
- n/a
- nanochannel
- oxygen flow rate
- oxygen vacancy
- passivation
- photoluminescent microbits
- PoL
- Polarization
- power clamp circuit
- quartz flexible accelerometer
- Reliability
- single-particle irradiation effect
- Technology, engineering, agriculture
- Technology: general issues
- thin-film transistors
- tri-gate
- ultrashort-pulse laser
- vacancy clusters
Links
DOI: 10.3390/books978-3-0365-9510-8Editions