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Radiation Effects of Advanced Electronic Devices and Circuits
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As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radiation sensitivity in advanced devices and integrated circuits. The aim of this reprint is to disclose the basic mechanisms of radiation effects for advanced devices and the breakthrough of new solutions to assess and mitigate radiation sensitivity in advanced devices and integrated circuits. This reprint presents new modeling approaches that predict how radiation impacts electronic devices and circuits. Accurate models are essential for designing devices that can tolerate radiation without significant performance degradation. We also focus on the innovative design and fabrication techniques that enhance the radiation tolerance of integrated circuits. Moreover, some discussions highlight new testing protocols and methodologies that provide more accurate and comprehensive evaluations of radiation hardness, as well as the latest advancements and trends that are of particular interest to researchers and professionals in the radiation effects community. Overall, this issue offers valuable insights into the challenges and opportunities in this rapidly evolving field, highlighting the critical importance of continued innovation and collaboration to address the complex problems posed by radiation in modern electronics.
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Keywords
- camera resolution
- carbon nanotube field effect transistor
- charge collection
- CMOS devices
- CMOS image sensor
- CMOS SPAD
- cryogenic temperature
- DCR
- displacement damage
- fault injection
- FDSOI
- Geant4
- HCI
- heavy ion irradiation
- heavy-ion irradiation
- high-dose-rate transient ionizing effect
- hot pixel
- interface traps
- leakage current
- long-term reliability
- Machine learning
- Monte Carlo
- Monte-Carlo method
- MOSFET
- n/a
- oxide reliability
- oxide trapped charges
- planar gate VDMOSFET
- proton radiation
- pulsed laser
- radiation
- radiation effect
- radiation effects
- radiation shielding
- radiation-hardened by design (RHBD)
- relay protection device
- Reliability
- resistor
- SiC MOSFET
- SiGe HBT
- SiGe heterojunction bipolar transistor
- silicon-on-insulator (SOI)
- single event effect
- single event effect (SEE)
- single event effects
- single event latch-up (SEL)
- single event transient
- single event upset
- single event upset (SEU)
- single-event effect
- single-event gate rupture
- single-event transient
- soft error
- Soft Error Rate
- soi
- space radiation
- spallation neutron
- split-gate-enhanced VDMOSFET
- star map recognition algorithm
- star sensor
- supply voltage
- synergistic effect
- system on chip
- TCAD
- TCAD simulation
- thermal neutron
- TID
- total ionizing dose
- total ionizing dose (TID)
- total ionizing dose effect
- transient bright spot
- transient pulse propagation
- trapped charge
- variability
- VDMOS
Links
DOI: 10.3390/books978-3-7258-1482-4Editions