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This book covers a wide range of the latest innovations in MOSFETs, including discussions of developments in various important mainstream MOSFETs. It covers modeling and property studies in MOSFET fields, including the compact model of the DMG-GC-DOTTDCD cylindrical gate MOSFET and the electrophysical properties of nanofilms generated using the magnetron sputtering method. The innovative analytical potential, charge, and current distributions in junctionless MOSFETs are conducted, and the related differences between accurate and simplified models are discussed in detail. Nanoscale devices design multiple solutions are also presented. The book scope reflects the most recent MOSFET developments, applications, and trends, which open up new horizons and present a perfect reference source for people working in MOSFET fields. This book is also meaningful in engineering fields, especially in electronics engineering, which includes radio frequency, microwave, electronics systems networks, 5G, 6G, and so on.
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DOI: 10.5772/intechopen.1001645Editions