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Fundamentals and Recent Advances in Epitaxial Graphene on SiC
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This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.
This book is included in DOAB.
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Keywords
- 2D peak line shape
- 3C-SiC on Si
- AFM
- atomic layer deposition
- buffer layer
- carrier concentration
- charge density
- chronoamperometry
- Copper
- deposition
- DFT
- electrodeposition
- electronic properties
- epitaxial graphene
- epitaxial graphene on SiC
- flat band
- free charge carrier properties
- G peak
- Graphene
- high-k insulators
- high-temperature sublimation
- intercalation
- ion implantation
- Material Engineering
- mobility
- monolayer graphene
- quasi-free-standing graphene
- Raman
- Raman spectroscopy
- redox reaction
- SIC
- silicon carbide
- strain
- sublimation
- substrate interaction
- Surface functionalization
- Technology, engineering, agriculture
- Technology: general issues
- terahertz optical Hall effect
- twisted bilayer graphene
- twistronics
- Voltammetry
- XPS
Links
DOI: 10.3390/books978-3-0365-1178-8Editions